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I-V characteristics of sub-micron NMOSFET and PMOSFET devices measured
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I-V characteristics of sub-micron NMOSFET and PMOSFET devices measured
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PMOS-based Weighted Average Circuit. (A) Schematic of the PMOS-based
(a)I-V characteristics for 0.35 m PMOS transistors with Ni monosilicide
